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NLAS3799(2006) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
MFG CO.
NLAS3799
(Rev.:2006)
ON-Semiconductor
ON Semiconductor 
NLAS3799 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
NLAS3799, NLAS3799L
Dual DPDT Ultra−Low RON
Switch
The NLAS3799 is an ultra−low RON DPDT and a 0.5 W RON DPDT
analog switch. This device is designed for low operating voltage, high
current switching of speaker output and earpiece for cellphone
applications. It can switch a balanced stereo output. The NLAS3799
can handle a balanced microphone/speaker/ring−tone generator in a
monophone mode. The device contains a break−before−make (BBM)
feature.
Features
Single Supply Operation
1.65 to 3.6 V VCC
Maximum Breakdown Voltage: 4.6 V
Low Static Power
NLAS3799 Interfaces with 2.8 V Chipset
NLAS3799L Interfaces with 1.8 V Chipset
These are Pb−Free Devices*
Typical Applications
Cell Phone Speaker/Microphone Switching
Ringtone−Chip/Amplifier Switching
Four Unbalanced (Single−Ended) Switches
Stereo Balanced (Push−Pull) Switching
Important Information
ESD Protection:
HBM (Human Body Model) > 8000 V
MM (Machine Model) > 400 V
Continuous Current Rating Through each Switch ±300 mA
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
Package: 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free
http://onsemi.com
1
WQFN−16
CASE 488AP
MARKING
DIAGRAMS
ÇÇÇÇ16
1
XXM
G
XX = Specific Device Code
AR = NLAS3799
AT = NLAS3799L
M = Date Code/Assembly Location
G = Pb−Free Package
COMA NOA Vcc NCD
16 15 14 13
NCA 1
A−B IN 2
NOB 3
COMB 4
12 COMD
11 NOD
10 C−D IN
9 NCC
5
6
7
8
NCB GND NOCCOMC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 1
Publication Order Number:
NLAS3799/D

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