NCV8570BSN25T1G(2013) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

NCV8570BSN25T1G
(Rev.:2013)

200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator

ON Semiconductor 

NCV8570B

ELECTRICAL CHARACTERISTICS

(VIN = VOUT + 0.5 V or 2.5 V (whichever is greater), VEN = 1.2 V, CIN = COUT = 1 mF, Cnoise = 10 nF, IOUT = 1 mA, TJ = −40C to 125C,

unless otherwise specified) (Note 4)

Parameter

Test Conditions

Symbol

Min

Typ

Max Unit

REGULATOR OUTPUT

Input Voltage Range

Output Voltage

1.8 V VIN = (VOUT + 0.5 V) to 5.5 V

2.5 V IOUT = 1 mA to 200 mA

2.8 V

3.0 V

3.3 V

VIN

VOUT

2.5

−

5.5

V

1.755

−

1.845

V

2.4375

−

2.5625

2.730

−

2.870

2.925

−

3.075

3.2175

−

3.3825

(−2.5%)

(+2.5%)

Power Supply Ripple Rejection

VIN = VOUT +1.0 V,

f = 120 Hz

IOUT = 1 mA to 150 mA f = 1 kHz

f = 10 kHz

PSRR

−

80

−

dB

−

82

−

−

63

−

Line Regulation

Load Regulation

Output Noise Voltage

Output Current Limit

Output Short Circuit Current

Dropout Voltage (Note 5)

Dropout Voltage (Note 5)

GENERAL

VIN = (VOUT +0.5 V) to 5.5 V, IOUT = 1 mA DVOUT / DVIN −0.1

−

0.1

%/V

IOUT = 1 mA to 200 mA

DVOUT / DIOUT

−

0.2

5.0

mV

VOUT = 1.8 V,

Cnoise = 100 nF

VN

−

10

−

mVRMS

f = 10 Hz to 100 kHz, Cnoise = 10 nF

−

15

−

IOUT = 1 mA to 150 mA

VOUT = VOUT(NOM) – 0.1 V

ILIM

200

310

470

mA

VOUT = 0V

ISC

205

320

490

mA

IOUT= 150 mA

VOUT(NOM) = 2.5 V

VOUT(NOM) = 2.8 V

VOUT(NOM) = 3.0 V

VOUT(NOM) = 3.3 V

VDO

−

100

180

mV

−

90

165

−

85

150

−

80

145

IOUT= 200 mA

VOUT(NOM) = 2.5 V

VOUT(NOM) = 2.8 V

VOUT(NOM) = 3.0 V

VOUT(NOM) = 3.3 V

VDO

−

140

230

mV

−

120

205

−

115

190

−

110

185

Ground Current

Disable Current

Thermal Shutdown

OUTPUT ENABLE

IOUT = 1 mA

IOUT = 200 mA

VEN = 0 V

Shutdown, Temperature Increasing

Reset, Temperature Decreasing

IGND

IDIS

TSDU

TSDD

−

70

110

mA

−

75

130

−

0.1

1.0

mA

−

150

−

C

−

135

−

C

Enable Threshold

Low

High

Vth(EN)

−

−

0.4

V

1.2

−

−

Internal Pull−Down Resistance

(Note 6)

RPD(EN)

2.5

5.0

10

MW

TIMING

Turn−On Time

IOUT = 10 mA, VOUT = Cnoise = 10 nF

tON

−

0.4

−

ms

0.975 VOUT(NOM)

Cnoise = 100 nF

−

4.0

−

Turn−Off Time

Cnoise = 10nF/100nF, IOUT = 1 mA

VOUT = 0.1 VOUT(NOM) IOUT = 10 mA

tOFF

−

2.0

−

ms

−

0.6

−

4. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25C. Low

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

5. Measured when the output voltage falls 100 mV below the nominal output voltage (nominal output voltage is the voltage at the output meas-

ured under the condition VIN = VOUT + 0.5 V). In the case of devices having the nominal output voltage VOUT = 1.8 V the minimum input

to output voltage differential is given by the VIN(MIN) = 2.5 V.

6. Expected to disable the device when EN pin is floating.

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