¡ Semiconductor
MSM51V18165B/BSL
AC Characteristics (2/2)
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
Parameter
MSM51V18165MSM51V18165MSM51V18165
Symbol B/BSL-50 B/BSL-60 B/BSL-70 Unit Note
Min. Max. Min. Max. Min. Max.
Read Command Set-up Time
tRCS
0
—
0
—
0
— ns 12
Read Command Hold Time
tRCH
0
—
0
—
0
— ns 9, 12
Read Command Hold Time referenced to RAS tRRH 0
—
0
—
0
— ns 9
Write Command Set-up Time
tWCS 0
—
0
—
0
— ns 10, 12
Write Command Hold Time
tWCH 7
— 10 — 13 — ns 12
Write Command Pulse Width
tWP 7
— 10 — 10 — ns
WE Pulse Width (DQ Disable)
tWPE 7
— 10 — 10 — ns
OE Command Hold Time
tOEH 7
— 10 — 13 — ns
OE Precharge Time
tOEP 7
— 10 — 10 — ns
OE Command Hold Time
tOCH 7
— 10 — 10 — ns
Write Command to RAS Lead Time
tRWL 7
— 10 — 13 — ns
Write Command to CAS Lead Time
tCWL 7
— 10 — 13 — ns 14
Data-in Set-up Time
tDS
0
—
0
—
0
— ns 11, 12
Data-in Hold Time
OE to Data-in Delay Time
tDH
7
— 10 — 13 — ns 11, 12
tOED 13 — 15 — 20 — ns
CAS to WE Delay Time
tCWD 30 — 34 — 44 — ns 10
Column Address to WE Delay Time
tAWD 42 — 49 — 59 — ns 10
RAS to WE Delay Time
tRWD 67 — 79 — 94 — ns 10
CAS Precharge WE Delay Time
tCPWD 47 — 54 — 64 — ns 10
CAS Active Delay Time from RAS Precharge tRPC 5
—
5
—
5
— ns 12
RAS to CAS Set-up Time (CAS before RAS) tCSR 5
—
5
—
5
— ns 12
RAS to CAS Hold Time (CAS before RAS) tCHR 10 — 10 — 10 — ns 13
RAS Pulse Width
(CAS before RAS Self-Refresh)
tRASS 100 — 100 — 100 — ms 16
RAS Precharge Time
(CAS before RAS Self-Refresh)
tRPS 90 — 110 — 130 — ns 16
CAS Hold Time
(CAS before RAS Self-Refresh)
tCHS –50 — –50 — –50 — ns 16
415