MRF21085LSR3 View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

MFG CO.

MRF21085LSR3

RF Power Field Effect Transistor

Motorola => Freescale 

Freescale Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain - Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 µAdc)

Zero Gate Voltage Drain Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

V(BR)DSS

65

—

—

Vdc

IDSS

—

—

10

µAdc

IGSS

—

—

1

µAdc

ON CHARACTERISTICS (DC)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 µAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1000 mAdc)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

VGS(th)

2

VGS(Q)

3

VDS(on)

—

gfs

—

—

4

Vdc

3.9

5

Vdc

0.18

0.21

Vdc

6

—

S

DYNAMIC CHARACTERISTICS (1)

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)

Crss

—

3.6

—

pF

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and

IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Common - Source Amplifier Power Gain

Gps

12

13.6

—

dB

(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)

Drain Efficiency

η

(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)

20

23

—

%

Third Order Intermodulation Distortion

IM3

(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3

measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz

referenced to carrier channel power.)

—

- 37.5

- 35

dBc

Adjacent Channel Power Ratio

ACPR

—

(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR

measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)

- 41

- 38

dBc

Input Return Loss

IRL

—

- 12

-9

dB

(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)

Output Mismatch Stress

Ψ

(VDD = 28 Vdc, Pout = 90 W CW, IDQ = 1000 mA, f = 2170 MHz

VSWR = 5:1, All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.

(continued)

MRF21085R3 MRF21085SR3 MRF21085LSR3

MOTOROLA RF DEVICE DATA

2

For More Information On This Product,

Go to: www.freescale.com

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