MMBD7000LT3G(2005) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
MMBD7000LT3G Datasheet PDF : 4 Pages
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MMBD7000LT1
Preferred Device
Dual Switching Diode
Features
• Pb−Free Packages are Available
http://onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1)TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance, Junction to
Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
1
ANODE
3
CATHODE/ANODE
2
CATHODE
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
MARKING DIAGRAM
M5C M
1
M5C
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MMBD7000LT1 SOT−23 3000 Tape & Reel
MMBD7000LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
MMBD7000LT3 SOT−23 10,000 Tape & Reel
MMBD7000LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
April, 2005 − Rev. 3
Publication Order Number:
MMBD7000LT1/D
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