MJF3055 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

MJF3055

Complementary Silicon Power Transistors

ON Semiconductor 

MJF3055 (NPN), MJF2955 (PNP)

20

10

5

3

TJ = 150°C

2

100 ms

5 ms

dc

1 ms

1

CURRENT LIMIT

SECONDARY BREAKDOWN LIMIT

0.5

THERMAL LIMIT @ TC = 25°C

0.3

(SINGLE PULSE)

0.2

1

23 5

10

20 30 50

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Maximum Forward Bias Safe

Operating Area

500

300

200 TJ = 150°C

100

25°C

50

- 55°C

30

20

VCE = 2 V

10

5

0.01 0.02

0.05 0.1 0.2 0.5 1 2

IC, COLLECTOR CURRENT (AMP)

Figure 2. DC Current Gain

5 10

PNP

MJF2955

2

TJ = 25°C

1.6

PNP

MJF3055

1.4

1.2

TJ = 25°C

1

1.2

0.8 VBE(sat) @ IC/IB = 10

0.8 VBE(sat) @ IC/IB = 10

0.6

VBE @ VCE = 2 V

VBE @ VCE = 3 V

0.4

VCE(sat) @ IC/IB = 10

0

0.1

0.2 0.3 0.5

1

23 5

10

IC, COLLECTOR CURRENT (AMP)

0.4

0.2

VCE(sat) @ IC/IB = 10

0

0.1

0.2 0.3 0.5

1

23 5

10

IC, COLLECTOR CURRENT (AMP)

Figure 3. “On” Voltages

TC TA

40 4.0

30 3.0

20 2.0

10 1.0

TC

TA

00

0 20 40 60 80 100 120 140 160

T, TEMPERATURE (°C)

Figure 4. Power Derating

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3

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