MJ3042 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
MJ3042 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
MJ3042
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 250 (Min) @ IC =2.5A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=350V(Min)
APPLICATIONS
·Developed for line operated amplifier, series pass and
Switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
350
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current -Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
Tstg
Storage Temperature
200
℃
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
Share Link: 