datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FS0201BB00BU View Datasheet(PDF) - Formosa Technology

Part Name
Description
MFG CO.
FS0201BB00BU
FAGOR
Formosa Technology 
FS0201BB00BU Datasheet PDF : 4 Pages
1 2 3 4
Fig. 1: Maximum average power dissipation
versus average on-state current
P (W)
1.2
360 º
1.0 α
DC
0.8
α = 180 º
0.6
α = 120 º
0.4
α = 90 º
α = 60 º
0.2
α = 30 º
0.0
IT(AV)(A)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Fig. 3: Average on-state current versus lead
temperature
I T(AV) (A)
1.4
DC
1.2
1.0
0.8
α = 180 º
0.6
0.4
0.2
0.0
T lead (ºC)
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Igt (Tj)
Igt (Tj = 25 ºC)
10.0
Ih (Tj)
Ih (Tj = 25 ºC)
9.0
8.0
7.0
6.0
Igt
5.0
4.0
3.0
2.0 Ih
1.0
0.0
Tj (ºC)
-40 -20 0 20 40 60 80 100 120 140
FS02...A/B
SENSITIVE GATE SCR
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and Tlead).
P (W)
1.2
Tlead (ºC)
-50
Rth (j-l)
1.0
Rth (j-a)
-70
0.8
0.6
-90
0.4
0.2
-110
0.0
Tamb (ºC)
0 20 40 60 80 100 120 140
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a) / Rth(j-a)
1.00
0.10
0.01
tp (s)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
I TSM (A)
25
20
Tj initial = 25 ºC
15
10
5
0
Number of cycles
1
10
100
1000
Jun - 02

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]