1314AB60 View Datasheet(PDF) - GHz Technology
Part Name
Description
MFG CO.
1314AB60 Datasheet PDF : 3 Pages
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R.1.A.052699-PHAN
1314AB60
60 Watts PEP, 25 Volts, Class AB
Linear 1350 – 1400 MHz
ADVANCED RELEASE
GENERAL DESCRIPTION
The 1314AB60 is a COMMON EMITTER transistor capable of providing 60
Watts of Class AB, RF output power over the band 1350-1400 MHz. This
transistor is specifically designed for LINEAR POWER amplifier applications.
It includes Input prematching and utilizes Gold metalization and HIGH VALUE
EMITTER ballalsting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55MY Style 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°C
200 Watts
Maximum Voltage and Current
Collector to Emitter Voltage (BVCES)
Collector to Emitter Voltage (BVCEO)
Emitter to Base Voltage (BVEBO)
Collector Current (Ic)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 V
27 V
3.5 V
20.0 Amps
-65 to +150 °C
+200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
Rl
ηc
VSWR
Power Out
Power Input
Power Gain
Return Loss
Collector Efficiency
Load Mismatch Tolerance
F = 1350 – 1400 MHz
VCC = 25 Volts
Icq = 250 mAmps
As above
60 Watt PEP
FUNCTIONAL CHARACTERISTICS @ 25°C
BVCES
BVCEO
BVEBO
ICES
hFE
θjc2
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC – Current Gain
Thermal Resistance
Ie = 100 mA
Ic = 100 mA
Ie = 25mA
Vce = 27 V
Vce = 5V, Ic = 1.5A
Tc = 25oC
MIN TYP MAX UNITS
60
W
12
W
7.0 8.0
dB
-10 DB
45 50
%
2:1
55
V
27
V
3.5
V
30
mA
20
100
.87 °C/W
Initial Issue May 1999
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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