Philips Semiconductors
PNP switching transistors
Product specification
2N2905; 2N2905A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• High-speed switching
• Driver applications for industrial service.
DESCRIPTION
PNP switching transistor in a TO-39 metal package.
NPN complements: 2N2219 and 2N2219A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM318
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
Ptot
hFE
fT
toff
PARAMETER
CONDITIONS
collector-base voltage open emitter
collector-emitter voltage open base
2N2905
2N2905A
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
Tamb ≤ 25 °C
IC = −150 mA; VCE = −10 V
IC = −50 mA; VCE = −20 V; f = 100 MHz
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA
MIN.
−
−
−
−
−
100
200
−
MAX. UNIT
−60
V
−40
−60
−600
600
300
−
300
V
V
mA
mW
MHz
ns
1997 May 28
2