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MC74VHC1GT08DFT2(2002) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
MFG CO.
MC74VHC1GT08DFT2
(Rev.:2002)
ON-Semiconductor
ON Semiconductor 
MC74VHC1GT08DFT2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC74VHC1GT08
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
TA = 25°C
Min Typ Max
TA 85°C –55 TA 125°C
Min Max Min
Max Unit
VIH
Minimum High–Level
Input Voltage
3.0 1.4
4.5 2.0
5.5 2.0
1.4
1.4
V
2.0
2.0
2.0
2.0
VIL
Maximum Low–Level
Input Voltage
3.0
0.53
0.53
0.53
V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
VOH
Minimum High–Level VIN = VIH or VIL
3.0 2.9 3.0
2.9
2.9
V
Output Voltage
IOH = –50 µA
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL
VIN = VIH or VIL
V
IOH = –4 mA
3.0 2.58
2.48
2.34
IOH = –8 mA
4.5 3.94
3.80
3.66
VOL
Maximum Low–Level VIN = VIH or VIL
3.0
Output Voltage
IOL = 50 µA
4.5
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 4 mA
3.0
IOL = 8 mA
4.5
0.0 0.1
0.1
0.0 0.1
0.1
0.36
0.44
0.36
0.44
0.1
V
0.1
V
0.52
0.52
IIN
Maximum Input
VIN = 5.5 V or GND 0 to
Leakage Current
5.5
±0.1
±1.0
±1.0 µA
ICC
Maximum Quiescent VIN = VCC or GND 5.5
Supply Current
1.0
20
40
µA
ICCT
Quiescent Supply
Input: VIN = 3.4 V
5.5
Current
1.35
1.50
1.65 mA
IOPD
Output Leakage
VOUT = 5.5 V
0.0
0.5
5.0
10
µA
Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
Maximum
Propagation Delay,
Input A or B to Y
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.1 8.8
5.9 12.3
3.5 5.9
4.2 7.9
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CIN
Maximum Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Capacitance
5.5 10
TA 85°C –55 TA 125°C
Min Max Min
Max Unit
10.5
12.5 ns
14.0
16.5
7.0
9.0
9.0
11.0
10
10
pF
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 6)
11
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
pAovwereargceoonpseurmatpintigoncu; rPreDnt=cCanPbDeoVbtCaCin2edbfiynth+eICeqCuatVioCn:CIC. C(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no–load dynamic
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