MC100EP35DG View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
MC100EP35DG Datasheet PDF : 11 Pages
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MC10EP35, MC100EP35
Table 11. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 14)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ
fmax
Maximum Frequency
(See Figure 2. Fmax/JITTER)
>3
>3
>3
tPLH,
tPHL
Propagation Delay to
Output Differential
R, CLK to Q, Q 200 400 480 200 410 490 200 420
tRR
Reset Recovery
tS
Setup Time
tH
Hold Time
150 80
150 50
150 50
150 90
150 50
150 50
150 100
150 80
150 80
tPW
Minimum Pulse width
RESET 550 400
550 400
550 400
Max Unit
GHz
ps
575
ps
ps
ps
tJITTER
Cycle−to−Cycle Jitter
(See Figure 2. Fmax/JITTER)
0.2 < 1
0.2 < 1
0.2 < 1 ps
tr
Output Rise/Fall Times
tf
(20% − 80%)
Q, Q 70 120 170 80 130 180 100 150 200 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
14. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V.
900
800
700
600
500
400
300
200
10ÉÉ00 ÉÉÉÉÉÉ(JITÉÉTERÉÉ) ÉÉÉÉÉÉÉÉÉÉ
0
1000
2000
3000
4000
FREQUENCY (MHz)
Figure 2. Fmax/Jitter
9
8
7
6
5
234ÉÉÉÉ
1
5000
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