MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
VS
Supply voltage
Percent duty cycle less
IO
Output current than 10%
per channel
Percent duty cycle less
than 50%
VIH
“H” input voltage
VIL
“L” input voltage
Limits
Unit
min
typ
max
0
—
40
V
0
—
–300
mA
0
—
–100
VS–0.2 — VS+0.3 V
0
—
VS–3
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Test conditions
Limits
min
typ+
max
Unit
IS (leak)
VCE (sat)
II
VF
IR
hFE
Supply leak current
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
VS = 40V
VI = VS–3V, IO = –300mA
VI = VS–3V, IO = –100mA
VI = VS–3.5V,
IF = –300mA
VR = 40V
VCE = 4V, IO = –300mA, Ta =25°C
—
—
100
µA
—
1.65
2.4
—
1.45
2.0
V
—
–150 –250 µA
—
–1.6 –2.4
V
—
—
100
µA
1000 8000
—
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
200
—
ns
—
2500
—
ns
NOTE 1 TEST CIRCUIT
INPUT
VS
Measured device
OPEN
PG
TIMING DIAGRAM
OUTPUT
INPUT
50%
50Ω
RL CL
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VIN = 7 to 10.3V
(2) Input-output conditions : RL = 40Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
50%
ton
50%
50%
toff
Aug. 1999