L6386E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

L6386E

High-voltage high and low side driver

STMicroelectronics 

L6386E

High-voltage high and low side driver

Features

■ High voltage rail up to 600V

■ dV/dt immunity ±50V/nsec in full temperature

range

■ Driver current capability:

– 400mA source,

– 650mA sink

■ Switching times 50/30 nsec rise/fall with 1nF

load

■ CMOS/TTL Schmitt trigger inputs with

hysteresis and pull down

■ Under voltage lock out on lower and upper

driving section

■ Integrated bootstrap diode

■ Outputs in phase with inputs

DIP-14

SO-14

Description

The L6386E is an high-voltage device,

manufactured with the BCD "OFF-LINE"

technology. It has a Driver structure that enables

to drive independent referenced Channel Power

MOS or IGBT. The High Side (Floating) Section is

enabled to work with voltage Rail up to 600V. The

Logic Inputs are CMOS/TTL compatible for ease

of interfacing with controlling devices.

Figure 1. Block diagram

BOOTSTRAP DRIVER

VCC

UV

4 DETECTION

3

HIN

2

SD

UV

DETECTION

LOGIC

LEVEL

SHIFTER

1

LIN

SGND

7

VREF

14

HVG

R

DRIVER

R

13

S

12

VCC

9

LVG

DRIVER

8

-

5

+

Vboot

H.V.

HVG

CBOOT

OUT

LVG

TO LOAD

PGND

DIAG

6 CIN

October 2007

Rev 1

D97IN520D

1/18

www.st.com

18

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