2N1722 View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

MFG CO.

2N1722

NPN SILICON HIGH POWER TRANSISTOR

Microsemi Corporation 

2N1722, 2N1724 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS

Forward-Current Transfer Ratio

IC = 2.0 Adc, VCE = 15 Vdc

IC = 5.0 Adc, VCE = 15 Vdc

IC = 100 mAdc, VCE = 15 Vdc

Collector-Emitter Saturation Voltage

IC = 2.0 Adc, IB = 200 mAdc

Base-Emitter Saturation Voltage

IC = 2.0 Adc, IB = 200 mVdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz

Output Capacitance

VCB = 15 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

Cobo

Min. Max. Unit

30

120

15

30

0.6

Vdc

1.2

Vdc

1.0

5.0

550

pF

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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