IXFN44N80P View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

MFG CO.

IXFN44N80P

Polar™ HiperFET™ Power MOSFET

IXYS CORPORATION 

PolarTM HiperFETTM

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

IXFN44N80P

D

G

S

S

Symbol

VDSS

VDGR

VGSS

VGSM

ID25

IDM

IA

EAS

dv/dt

PD

TJ

TJM

Tstg

VISOL

Md

Weight

Test Conditions

TJ = 25C to 150C

TJ = 25C to 150C, RGS = 1M

Continuous

Transient

TC = 25C

TC = 25C, Pulse Width Limited by TJM

TC = 25C

TC = 25C

IS  IDM, VDD  VDSS, TJ  150C

TC = 25C

50/60 Hz, RMS, t = 1minute

IISOL 1mA,

t = 1s

Mounting Torque for Base Plate

Terminal Connection Torque

Maximum Ratings

800

V

800

V

30

V

40

V

39

A

100

A

22

A

3.4

J

10

694

-55 ... +150

150

-55 ... +150

2500

3000

1.5/13

1.3/11.5

30

V/ns

W

C

C

C

V~

V~

Nm/lb.in

Nm/Ib.in

g

Symbol

Test Conditions

(TJ = 25C Unless Otherwise Specified)

BVDSS

VGS = 0V, ID = 800A

VGS(th)

VDS = VGS, ID = 8mA

IGSS

VGS = 30V, VDS = 0V

IDSS

VDS = VDSS, VGS = 0V

TJ = 125C

RDS(on)

VGS = 10V, ID = 22A, Note 1

Characteristic Values

Min. Typ. Max.

800

V

3.0

5.0 V

200 nA

50 A

1.5 mA

190 m

VDSS =

ID25 =

 RDS(on)

trr



800V

39A

190m

250ns

miniBLOC

E153432

S

G

S

D

G = Gate

S = Source

D = Drain

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

Features

 International Standard Package

 Low Intrinsic Gate Resistance

 miniBLOC with Aluminum Nitride

Isolation

 Low Package Inductance

 Fast Intrinsic Rectifier

 Low RDS(on) and QG

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 DC-DC Converters

 Battery Chargers

 Switch-Mode and Resonant-Mode

Power Supplies

 AC Motor Control

 High Speed Power Switching

Appliccation

© 2017 IXYS CORPORATION, All Rights Reserved

DS99503F(8/17)

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