IXFB62N80Q3 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
IXFB62N80Q3 Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs
VDS = 20V, ID = ID = 0.5 • ID25, Note 1
28
48
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
13.6
nF
1260
pF
100
pF
RGi
Gate Input Resistance
0.13
Ω
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
54
ns
20
ns
62
ns
11
ns
Qg(on)
270
nC
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = ID = 0.5 • ID25
90
nC
Qgd
120
nC
RthJC
RthCS
0.08 °C/W
0.13
°C/W
IXFB62N80Q3
PLUS264TM (IXFB) Outline
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 31A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
62 A
250 A
1.5 V
1.6
13.4
300 ns
μC
A
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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