Fig. 7. Input Admittance
50
45
40
35
TJ = 125ºC
30
25ºC
- 40ºC
25
20
15
10
5
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
50
45
40
35
30
25
20
TJ = 125ºC
15
10
TJ = 25ºC
5
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD - Volts
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
100
Coss
10
Crss
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA14N60P IXFP14N60P
IXFH14N60P
Fig. 8. Transconductance
27
24
TJ = - 40ºC
21
25ºC
125ºC
18
15
12
9
6
3
0
0
5 10 15 20 25 30 35 40 45 50
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 300V
I D = 7A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
4
8
12 16 20 24 28 32 36
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
100
RDS(on) Limit
10
TJ = 150ºC
TC = 25ºC
Single Pulse
1
10
1ms
10ms
25µs
100µs
DC
100
VDS - Volts
1000