IRH7450 View Datasheet(PDF) - International Rectifier

Part Name

Description

MFG CO.

IRH7450

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRH7450, IRH8450 Devices

Radiation Characterstics

Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 400 Vdc

Fig 14. Typical Output Characteristics

Pre-Irradiation

Fig 15. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 16. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

www.irf.com

Fig 17. Typical Output Characteristics

Post-Irradiation 1 Mega Rads(Si)

7

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