SP000084278(2006) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

SP000084278
(Rev.:2006)

CoolMOS™ Power Transistor

Infineon Technologies 

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Continuous diode forward current

Diode pulse current2)

Reverse diode dv /dt 4)

Symbol Conditions

IS

I S,pulse

T C=25 °C

dv /dt

IPP60R199CP

Value

9.9

51

15

Unit

A

V/ns

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case R thJC

Thermal resistance, junction -

ambient

R thJA

leaded

Soldering temperature,

wavesoldering only allowed at leads

T sold

1.6 mm (0.063 in.)

from case for 10 s

Values

Unit

min. typ. max.

-

-

0.9 K/W

-

-

62

-

-

260 °C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

V (BR)DSS V GS=0 V, I D=250 µA

600

V GS(th) V DS=V GS, I D=1.1 mA

2.5

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

-

V DS=600 V, V GS=0 V,

T j=150 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on)

V GS=10 V, I D=9.9 A,

T j=25 °C

-

V GS=10 V, I D=9.9 A,

T j=150 °C

-

RG

f =1 MHz, open drain

-

-

-V

3

3.5

-

1 µA

10

-

-

100 nA

0.18 0.199 Ω

0.49

-

2

-Ω

Rev. 2.0

page 2

2006-06-19

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