HSM276SR View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

MFG CO.

HSM276SR

Silicon Schottky Barrier Diode for Balanced Mixer

Hitachi -> Renesas Electronics 

HSM276SR

Silicon Schottky Barrier Diode for Balanced Mixer

ADE-208-040D (Z)

Rev. 4

Aug. 1994

Features

• High forward current, Low capacitance.

• HSM276SR which is interconnected in series configuration is designed for balanced mixer use.

• MPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

HSM276SR

Laser Mark

C9

Package Code

MPAK

Pin Arrangement

3

2

1

(Top View) 1 Anode 1

2 Cathode 2

3 Cathode 1

Anode 2

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Average forward current

Junction temperature

Storage temperature

Note: Per one device

Symbol

VR

IO*

Tj

Tstg

Value

Unit

3

V

30

mA

125

°C

–55 to +125

°C

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