OM6025SC - OM6032SC
ELECTRICAL CHARACTERISTICS: OM6027SC, OM6028SC (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
V(BR)DSS
1000
-
-
Zero Gate Voltage Drain
IDSS
(VDS = 1000 V, VGS = 0)
-
-
0.25
(VDS = 1000 V, VGS = 0, TJ = 125° C)
-
-
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
ON CHARACTERISTICS*
Gate-Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 10 A)
(ID = 5 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc)
DYNAMIC CHARACTERISTICS
VGS(th)
rDS(on)
VDS(on)
gFS
2.0
3.0
4.0
1.5
-
3.5
-
-
1.3
-
-
15
-
-
15.3
5.0
-
-
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
-
3900
-
-
300
-
-
65
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 250 V, ID = 5 A,
Rgen = 4.3 ohms)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 10 A,
VGS = 10 V)
SOURCE DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-
40
-
-
100
-
-
100
-
-
100
-
-
100
140
-
20
-
-
40
-
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(IS = 10 A, d/dt = 100 A/µs)
VSD
-
-
1.5
ton
**
trr
-
600
1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
Unit
Vdc
mAdc
nAdc
nAdc
Vdc
Ohm
Vdc
mhos
pF
ns
nC
Vdc
ns
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246