HFA08TA60CS View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
HFA08TA60CS Datasheet PDF : 6 Pages
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HFA08TA60CS
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode,
2x4A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
600
IF = 4.0 A
-
Maximum forward voltage
VFM
IF = 8.0 A
See fig. 1
-
IF = 4.0 A, TJ = 125 °C
-
Maximum reverse
leakage current
VR = VR rated
-
IRM
See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.5
1.8
1.4
0.17
44
4.0
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8.0
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 4.0 A
dIF/dt = 200 A/µs
VR = 200 V
-
17
-
28
-
38
-
2.9
-
3.7
-
40
-
70
Peak rate of fall of recovery
current during tb
See fig. 11 and 12
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
280
-
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Tlead
RthJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style D2PAK
MIN.
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
5.0
-
80
2.0
-
0.07
-
-
12
(10)
HFA08TA60CS
UNITS
°C
K/W
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93041
Revision: 22-Oct-08
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