GA200HS60S1PBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
GA200HS60S1PBF Datasheet PDF : 6 Pages
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www.DataSheet.co.kr
GA200HS60S1PbF
Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Total gate charge
Qg
IC = 200 A
-
Gate to emitter charge
Qge
VCC = 400 V
-
Gate to collector charge
Qgc
VGE = 15 V
-
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
IC = 200 A, VCC = 480 V, VGE = 15 V
-
Eoff
Rg = 10 Ω
-
Ets
Freewheeling diode: 30EPH06, TJ = 25 °C
-
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
IC = 200 A, VCC = 480 V, VGE = 15 V
-
Eoff
Rg = 10 Ω
-
Ets
Freewheeling diode: 30EPH06, TJ = 125 °C
-
Input capacitance
Cies
VGE = 0 V
-
Output capacitance
Coes
VCC = 30 V
-
Reverse transfer capacitance
Cres
f = 1.0 MHz
-
TYP.
1600
260
580
30
50
80
34
104
138
32 500
2080
380
MAX.
1700
340
670
-
-
-
-
-
151
-
-
-
UNITS
nC
mJ
mJ
pF
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
Junction to case per leg
Case to sink
Mounting torque
case to heatsink
case to terminal 1, 2, 3
TJ
TStg
RthJC
RthCS
Weight
MIN.
- 40
- 40
-
-
-
-
-
TYP.
-
-
-
0.1
-
-
185
MAX.
150
125
0.15
-
4
3
-
UNITS
°C
°C/W
Nm
g
1000
VGE = 15 V
500 µs pulse width
TJ = 125 °C
100
TJ = 25 °C
10
0.6
0.8
1.0
1.2
1.4
1.6
VCE - Collector to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100
TJ = 125 °C
10
TJ = 25 °C
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGE - Gate to Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
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2
For technical questions, contact: indmodules@vishay.com
Document Number: 94362
Revision: 03-May-10
Datasheet pdf - http://www.DataSheet4U.net/
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