FQP60N03L View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
FQP60N03L Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
VDS = 24 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
--
--
V
-- 0.02
--
V/°C
--
--
1
µA
--
--
10
µA
--
--
100
nA
--
--
-100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0
--
2.5
V
VGS = 10 V, ID = 30 A
VGS = 5 V, ID =30 A
--
--
0.011 0.0135
0.015 0.019
Ω
VDS = 15 V, ID = 30 A (Note 4) --
33
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
875 1140
pF
--
570 740
pF
--
155 200
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 15 V, ID = 30 A,
RG = 25 Ω
--
17
45
ns
--
155 320
ns
--
10
30
ns
(Note 4, 5) --
75
160
ns
VDS = 24 V, ID = 60 A,
--
18.5
24
nC
VGS = 5 V
--
7
--
nC
(Note 4, 5) --
9.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
60
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
240
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 60 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 60 A,
--
40
--
ns
dIF / dt = 100 A/µs
(Note 4) --
35
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 60µH, IAS = 60A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 60A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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