Typical Performance Characteristics
Figure 1. On-Region Characteristics
20 VGS = 15.0V
10
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.04
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10
30
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
2.0
VGS = 10V
1.5
VGS = 20V
1.0
0
*Note: TJ = 25oC
3
6
9
12
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1000
750
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
250
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
20
10
150oC
25oC
1
-55oC
0.1
4
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
5
6
7
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
70
150oC
10
25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.4
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
*Note: ID = 5A
0
0
4
8
12
Qg, Total Gate Charge [nC]
FDD5N53/FDU5N53 Rev. A
3
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