Electrical Characteristics (TA = 25 OC unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
∆BVDSS/∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate - Body Leakage Current
ON CHARACTERISTICS (Note 2)
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25oC
-25
-22
V
mV / oC
VDS = -20 V, VGS = 0 V
-1
µA
TJ = 55°C
-10
µA
VGS = -8 V, VDS = 0 V
-100
nA
VGS(th)
∆VGS(th)/∆TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = -250 µA
ID = -250 µA, Referenced to 25oC
VGS = -4.5 V, ID = -0.41 A
TJ =125°C
VGS = -2.7 V, ID = -0.25 A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -0.41 A
-0.65
-1.5
-0.82
2
0.85
1.2
1.15
0.9
-1.5
V
mV / oC
1.1
Ω
1.9
1.5
A
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
62
pF
34
pF
10
pF
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
VDD = -5 V, ID = -0.5 A,
VGS = -4.5 V, RGEN = 6 Ω
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = -5 V, ID = -0.41 A,
VGS = -4.5 V
Qgd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
7
15
ns
8
16
ns
55
80
ns
35
60
ns
1.1
1.5
nC
0.31
nC
0.29
nC
IS
Maximum Continuous Source Current
-0.25
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.25 A (Note 2)
-0.85 -1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed
by design while RθCA is determined by the user's board design. RθJA = 415OC/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDG6304P Rev.E1