DTA114T View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

MFG CO.

DTA114T

PNP SILICON TRANSISTOR

Unisonic Technologies 

DTA114T

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-100

mA

Collector Power Dissipation

SOT-23

SOT-323/SOT-523

PC

200

mW

150

mW

Junction Temperature

Storage Temperature

TJ

+150

℃

TSTG

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Input Resistance

Transition Frequency

* Transition frequency of the device

SYMBOL

TEST CONDITIONS

BVCBO IC=-50μA

BVCEO IC=-1mA

BVEBO IE=-50μA

VCE(SAT) IC=-10mA, IB=-1mA

ICBO VCB=-50V

IEBO VEB=-4V

hFE VCE=-5V, IC=-1mA

R1

fT VCE=-10V, IE=5mA, f=100MHz*

MIN TYP MAX UNIT

-50

V

-50

V

-5

V

-0.3 V

-0.5 μA

-0.5 μA

100 250 600

7 10 13 kΩ

250

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-061,B

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