K6X8008T2B-Q View Datasheet(PDF) - Samsung
Part Name
Description
MFG CO.
K6X8008T2B-Q Datasheet PDF : 9 Pages
| |||
K6X8008T2B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Product
Supply voltage
Vcc
K6X8008T2B Family
Ground
Vss
All Family
Input high voltage
VIH
K6X8008T2B Family
Input low voltage
VIL
K6X8008T2B Family
Note:
1. Industrial Product: TA=-40 to 85°C, otherwise specified.
Automotive Product: TA=-40 to 125°C, otherwise specified.
2. Overshoot: VCC+3.0V in case of pulse width ≤30ns.
3. Undershoot: -3.0V in case of pulse width ≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
2.7
0
2.2
-0.33)
Typ
Max
3.0/3.3
3.6
0
0
-
Vcc+0.32)
-
0.6
Unit
V
V
V
V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 - 1 µA
Output leakage current
ILO CS1=VIH, CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1 - 1 µA
ICC1
Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V,
VIN≤0.2V or VIN≥Vcc-0.2V
Average operating current
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH,
VIN=VIL or VIH
- - 3 mA
- - 30 mA
Output low voltage
VOL IOL = 2.1mA
- - 0.4 V
Output high voltage
VOH IOH = -1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
- - 0.4 mA
Standby Current(CMOS)
Other input =0~Vcc,
K6X8008T2B-F -
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V (CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
K6X8008T2B-Q -
- 15
µA
- 25
4
Revision 1.0
September 2003
Share Link: 