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DS1315S-33 View Datasheet(PDF) - Dallas Semiconductor -> Maxim Integrated

Part Name
Description
MFG CO.
DS1315S-33
Dallas
Dallas Semiconductor -> Maxim Integrated 
DS1315S-33 Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
DS1315 Phantom Time Chip
DC POWER DOWN ELECTRICAL CHARACTERISTICS
(0°C to 70°C; VCC < 4.5V)
PARAMETER
SYMBOL MIN TYP MAX
UNITS NOTES
CEO Output Voltage
VCEO
VCCI-0.2
or
V
8
VBAT1,2
-0.2
VBAT1 or VBAT2 Battery
IBAT
Current
0.5
µA
6
Battery Backup Current
@ VCCO = VBAT-0.2V
ICCO2
10
µA
9
AC ELECTRICAL OPERATING CHARACTERISTICS
ROM/RAM = GND
PARAMETER
(0°C to 70°C; VCC = 5.0 ± 10%)
SYMBOL MIN TYP
MAX
UNITS NOTES
Read Cycle Time
CEI Access Time
tRC
65
tCO
ns
55
ns
OE Access Time
tOE
55
ns
CEI to Output Low Z
tCOE
5
ns
OE to Output Low Z
tOEE
5
ns
CEI to Output High Z
tOD
25
ns
OE to Output High Z
tODO
25
ns
Read Recovery
Write Cycle
Write Pulse Width
Write Recovery
Data Setup
Data Hold Time
CEI Pulse Width
tRR
10
tWC
65
tWP
55
tWR
10
tDS
30
tDH
0
tCW
55
ns
ns
ns
ns
4
ns
5
ns
5
ns
OE Pulse Width
tOW
55
ns
RST Pulse Width
tRST
65
ns
9 of 21

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