DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V +10%, – 5%, TJ = 20 to 110°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages referenced to VSS = 0 V)
Parameter
Symbol Min Typ
Supply Voltage
VDD
3.135 3.3
Operating Temperature
Input Low Voltage
TJ
20
—
VIL
– 0.5* —
Input High Voltage
* VIL ≥ – 1 V for t ≤ tKHKH/2.
** VIH ≤ VDD + 1 V for t ≤ tKHKH/2.
Address and Control Inputs
VIH
2.0**
—
Max
Unit
3.6
V
110
°C
0.8
V
VDD + 0.5
V
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Input Leakage Current (0 V ≤ Vin ≤ VDD)
Output Leakage Current (0 V ≤ Vin ≤ VDD)
AC Supply Current (Device Selected,
Cycle Time ≥ tKHKH min) IOUT = 0
Ilkg(I)
—
—
±1
Ilkg(O)
—
—
±1
MCM63P531–4.5
MCM63P531–7
MCM63P531–8
MCM63P531–9
IDDA
IDDA
—
—
TBD
—
—
350
CMOS Standby Supply Current (Deselected,
Clock (K) Cycle Time ≥ tKHKH, All Inputs Toggling at
CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM63P531–4.5
MCM63P531–7
MCM63P531–8
MCM63P531–9
ISB1
ISB1
—
—
TBD
—
—
120
Sleep Mode Supply Current (Sleep Mode, Clock (K) Cycle Time ≥ tKHKH,
All Other Inputs Held to Static CMOS Levels Vin ≤ VSS + 0.2 V
or ≥ VDD – 0.2 V)
IZZ
—
—
65
(100 MHz)
IZZ
—
—
10
Output Low Voltage (IOL = 8 mA)
VOL
—
—
0.4
Output High Voltage (IOH = –4 mA)
VOH
2.4
—
—
NOTES:
1. Device in Deselected mode as defined by the Truth Table.
2. Device in Sleep Mode as defined by the Asynchronous Truth Table.
3. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V).
4. All addresses transition simultaneously low (LSB) and then high (MSB).
5. Data states are all zero.
Unit Notes
µA
µA
mA 3, 4, 5
mA
1
mA
2
V
V
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TJ = 20 to 110°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol Min Typ
Input Capacitance
Cin
—
3
Input/Output Capacitance
CI/O
—
6
Max
Unit
5
pF
8
pF
MOTOROLA FAST SRAM
MCM63P531
7