BYV32-100HE3/45 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
BYV32-100HE3/45 Datasheet PDF : 5 Pages
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www.vishay.com
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
18
16
12
8
4
Resistive or Inductive Load
0
0
25
50
75
100
125
150
Case Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1000
100
TC = 100 °C
10
1
TC = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
150
TJ = 150 °C
125
10 ms Single Half Sine-Wave
100
75
50
25
0
1
10
100
Number of Cycles at 50 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
10
TJ = 125 °C
TJ = 25 °C
1
0.1
0.01
0.1
Pulse Width = 300 μs
1 % Duty Cycle
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
60
TJ = 25 °C
f = 1.0 MHz
50
Vsig = 50 mVp-p
40
30
20
10
0
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 23-Feb-16
3
Document Number: 88558
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