Philips Semiconductors
Rectifier diodes
ultrafast, rugged
trr / ns
1000
100
10
IF=20A
IF=1A
1
1
10
100
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Irrm / A
10
1
0.1
IF=20A
IF=1A
0.01
1
10
100
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
50 IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
0
0
0.5 VF / V 1.0
1.5
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Product specification
BYV42F, BYV42EX series
100 Qs / nC
10
IF=20A
10A
5A
2A
1A
1.0
1.0
10
100
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV42F/EX
Fig.11. Transient thermal impedance; per diode;
Zth j-hs = f(tp).
October 1998
4
Rev 1.300