BYG23MHE3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
BYG23MHE3 Datasheet PDF : 4 Pages
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BYG23M
Vishay General Semiconductor
160
VR = VRRM
140
RθJA = 125 K/W
120
RθJA = 175 K/W
100
100 %
80
60
40
80 %
20
0
25
50
75
100
125
150
Junction Temperature (°C)
Figure 3. Max. Reverse Power Dissipation vs. Junction Temperature
1000
VR = VRRM
100
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0.1
f = 1 MHz
TJ = 25 °C
1
10
100
Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Figure 4. Reverse Current vs. Junction Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88962 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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