BUZ 91
Not for new design
Power dissipation
Ptot = ƒ(TC)
160
W
Ptot
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
9
A
ID
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
A
I
D
10 1
tp = 2.9µs
10 µs
100 µs
1 ms
K/W
Z
thJC
10 -1
10 0
10 ms
DC
10 -1
10 0
10 1
10 2
V 10 3
VDS
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96