BUZ325 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BUZ325

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 325

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

Unit

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 8 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

gfs

8

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

S

9.8

-

pF

1900

2500

260

400

110

170

ns

30

45

90

135

350

465

100

135

Semiconductor Group

3

07/96

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