BUZ325 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BUZ325

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 325

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 400 V, VGS = 0 V, Tj = 25 °C

VDS = 400 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 8 A

Symbol

min.

Values

Unit

typ.

max.

V(BR)DSS

400

VGS(th)

2.1

IDSS

-

-

IGSS

-

RDS(on)

-

V

-

-

3

4

µA

0.1

1

10

100

nA

10

100

Ω

0.28

0.35

Semiconductor Group

2

07/96

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