BUZ358 View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

BUZ358

SIPMOS ® Power Transistor

Siemens AG 

BUZ 358

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

gfs

2.5

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

5.2

-

1700 2200

170

300

80

120

30

45

100

160

400

520

130

170

Unit

S

pF

ns

Semiconductor Group

3

01/97

Share Link: