BUZ357 View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

BUZ357

SIPMOS ® Power Transistor

Siemens AG 

BUZ 357

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 1000 V, VGS = 0 V, Tj = 25 °C

VDS = 800 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 3.2 A

Symbol

min.

Values

Unit

typ.

max.

V(BR)DSS

1000 -

VGS(th)

2.1

3

IDSS

-

-

-

10

IGSS

-

10

RDS(on)

-

1.7

V

-

4

µA

1

100

nA

100

Ω

2

Semiconductor Group

2

01/97

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