BUZ111S View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

BUZ111S

SIPMOS ® Power Transistor

Siemens AG 

BUZ111S

SPP80N05

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 °C

-

Inverse diode direct current,pulsed

ISM

TC = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 160 A

-

Reverse recovery time

trr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

-

-

1.25

105

0.29

A

80

320

V

1.8

ns

160

µC

0.45

Semiconductor Group

4

28/Jan/1998

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