BUZ103SL View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

BUZ103SL

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens AG 

BUZ 103 SL

SPP28N05L

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 °C

-

Inverse diode direct current,pulsed

ISM

TC = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 56 A

-

Reverse recovery time

trr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

-

-

1.1

60

0.15

A

28

112

V

1.8

ns

90

µC

0.25

Semiconductor Group

4

30/Jan/1998

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