BUL810 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
BUL810 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL810
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; L= 25mH
450
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
9
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A ;IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 8A ;IB= 1.6A
VCE=1000V; VBE= 0;
VCE=1000V; VBE= 0;TC=125℃
VCE= 450V; IB= 0
1.0
V
1.5
V
5.0
V
1.3
V
1.6
V
0.1
0.5
mA
0.25 mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 5V
10
40
hFE-2
DC Current Gain
IC= 10mA ; VCE= 5V
10
Switching Times (inductive load)
ts
Storage Time
tf
Fall Time
IC= 8A ;IB1= 1.6A;VBE(off)= -5V
RBB= 0.4Ω, VCL= 350V,
L= 200μH
1.5 2.3 μs
55 110 ns
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