BUK9506-75B View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
BUK9506-75B Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9506-75B
N-channel TrenchMOS logic level FET
100
ID
(A)
80
03ng82
60
40
20
Tj = 175 °C
Tj = 25 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS (V)
2.5
VGS(th)
(V)
2.0
1.5
1.0
0.5
0
−60
0
max
typ
min
03ng52
60
120
180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
12
RDSon
(mΩ)
10
VGS = 3 V
3.2
3.4
03ng85
2.4
a
1.6
03nb25
8
3.6 3.8
4
5
0.8
6
10
4
0
100
200
300
ID (A)
0
−60
0
60
120
180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK9506-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
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