BU4S11 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

MFG CO.

BU4S11

Single 2-input NAND gate

ROHM Semiconductor 

Standard ICs

Switching characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C, CL = 50 pF)

Parameter

Output rise time

Symbol

tTLH

Output fall time

tTHL

tPLH

Propagation delay time

tPHL

Input capacitance

CIN

Min.

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ.

70

35

30

70

35

30

85

40

30

85

40

30

5

Max.

—

—

—

—

—

—

—

—

—

—

—

—

—

Unit

VDD (V)

ns

5

ns

10

ns

15

ns

5

ns

10

ns

15

ns

5

ns

10

ns

15

ns

5

ns

10

ns

15

pF

5

Conditions

—

—

—

—

—

BS4S11

Measurement

circuit

Fig.2

—

•Measurement circuits

VDD

A

V

VSS

Fig.1 DC characteristics measurement circuit

VDD

20ns

20ns

90%

VDD

Input waveform

50%

10%

VSS

tPLH

tPHL

P.G

90%

CL = 50pF

Output waveform

50%

10%

VOH

VOL

VSS

tTLH

tTHL

Fig.2 Switching characteristics measurement circuit

3

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