BTS117 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BTS117

Smart Lowside Power Switch

Infineon Technologies 

Electrical Characteristics

Parameter

at Tj=25°C, unless otherwise specified

Characteristics

Initial peak short circuit current limit

VIN = 10 V, VDS = 12 V

Current limit 1)

VIN = 10 V, VDS = 12 V, tm = 350 µs,

Tj = -40...+150 °C

Dynamic Characteristics

Turn-on time VIN to 90% ID:

RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V

Turn-off time VIN to 10% ID:

RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V

Slew rate on

70 to 50% Vbb:

RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V

Slew rate off

50 to 70% Vbb:

RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V

Protection Functions

Thermal overload trip temperature

Unclamped single pulse inductive energy

ID = 3.5 A, Tj = 25 °C, Vbb = 32 V

ID = 3.5 A, Tj = 150 °C, Vbb = 32 V

Inverse Diode

Inverse diode forward voltage

IF = 5*3.5A, tm = 300 µS, VIN = 0 V

BTS 117

Symbol

Values

Unit

min. typ. max.

ID(SCp)

-

25

-A

ID(lim)

7

10 15

ton

-

toff

-

-dVDS/dton

-

dVDS/dtoff

-

40 70 µs

70 150

1

3 V/µs

1

3

Tjt

150 165

- °C

EAS

mJ

1000 --

--

225 --

--

VSD

-

1

-V

1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition

and a short circuit occurs, these values might be exceeded for max. 50 µs.

Page 4

19.05.2000

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