BT151X-800R View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

BT151X-800R

Thyristors

Philips Electronics 

Philips Semiconductors

BT151X series

Thyristors

7. Characteristics

Table 6: Characteristics

Tj = 25 °C unless otherwise stated

Symbol Parameter

Static characteristics

IGT

gate trigger current

IL

latching current

IH

holding current

VT

on-state voltage

VGT

gate trigger voltage

ID, IR

off-state leakage

current

Dynamic characteristics

dVD/dt

critical rate of rise of

off-state voltage

tgt

gate controlled

turn-on time

tq

circuit commuted

turn-on time

Conditions

VD = 12 V; IT = 0.1 A; Figure 8

VD = 12 V; IGT = 0.1 A; Figure 10

VD = 12 V; IGT = 0.1 A; Figure 11

IT = 23 A; Figure 9

VD = 12 V; IT = 0.1 A; Figure 7

VD = VDRM(max); IT = 0.1 A;

Tj = 125 °C

VD = VDRM(max); VR = VRRM(max);

Tj = 125 °C

VDM = 67% VDRM(max); Tj = 125 °C;

exponential waveform; Figure 12

gate open circuit

RGK = 100 Ω

ITM = 40 A; VD = VDRM(max);

IG = 0.1 A; dIG/dt = 5 A/µs

VD = 67% VDRM(max); Tj = 125 °C;

ITM = 20 A; VR = 25 V;

dITM/dt = 30 A/µs;

dVD/dt = 50 V/µs; RGK = 100 Ω

Min

-

-

-

-

-

0.25

-

50

200

-

-

Typ

Max

2

15

10

40

7

20

1.4

1.75

0.6

1.5

0.4

-

0.1

0.5

130

-

1000

-

2

-

70

-

Unit

mA

mA

mA

V

V

V

mA

V/µs

V/µs

µs

µs

1.6

VGT (Tj)

VGT (25 °C)

1.2

001aaa953

3

IGT (Tj)

IGT (25 °C)

2

001aaa952

0.8

1

0.4

−50

0

50

100

150

Tj (°C)

0

−50

0

50

100

150

Tj (°C)

Fig 7. Normalized gate trigger voltage as a function of Fig 8. Normalized gate trigger current as a function of

junction temperature.

junction temperature.

9397 750 13162

Product data sheet

Rev. 04 — 9 June 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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