BSS84P(2002) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BSS84P
(Rev.:2002)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Final data

BSS 84 P

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

(Pin 3)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

Symbol

Values

Unit

min. typ. max.

RthJS

-

- 200 K/W

RthJA

-

- 350

-

- 300

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS -60

-

-V

VGS=0, ID=-250µA

Gate threshold voltage, VGS = VDS

ID=-20µA

Zero gate voltage drain current

VDS=-60V, VGS=0, TA=25°C

VDS=-60V, VGS=0, TA=125°C

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS(th)

-1 -1.5 -2

IDSS

IGSS

µA

- -0.1 -1

- -10 -100

-

-10 -100 nA

RDS(on)

-

8

12 W

VGS=-4.5V, ID=-0.14A

Drain-source on-state resistance

VGS=-10V, ID=-0.17A

RDS(on)

-

5.8

8

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2002-09-04

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