BSS81 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BSS81

NPN Silicon Switching Transistors

Infineon Technologies 

BSS79, BSS81

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 20 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Delay time

VCC = 30 V, IC = 150 mA, IB1 = 15 mA,

VBE(off) = 0.5 V

fT

-

250

- MHz

Ccb

-

6

- pF

td

-

-

10 ns

Rise time

tr

VCC = 30 V, IC = 150 mA, IB1 = 15 mA,

VBE(off) = 0.5 V

Storage time

tstg

VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA

Fall time

tf

VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA

-

-

25

-

-

250

-

-

60

Test circuits

Delay and rise time

30 V

9.9 V

0

200 Ω

Osc.

619 Ω

0.5 V

Oscillograph: R > 100k

C < 12pF

tr < 5ns

EHN00045

Storage and fall time

30 V

~100 µs

< 5 ns

16.2 V

0

200 Ω

Osc.

1kΩ

-13.8 V

~500 µs

-3.0 V EHN00046

3

Nov-30-2001

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