BSR17 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BSR17 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
BSR17A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
Ce
fT
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 6 V
VCE = 1 V; note 1; see Fig.2
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 50 mA
IC = 100 mA
IC = 10 mA; IB = 1 mA; note 1
IC = 50 mA; IB = 5 mA; note 1
IC = 10 mA; IB = 1 mA; note 1
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
MIN.
−
−
−
MAX. UNIT
50
nA
5
µA
50
nA
60
−
80
−
100 300
60
−
30
−
−
200 mV
−
200 mV
650 850 mV
−
950 mV
−
4
pF
−
8
pF
300 −
MHz
−
5
dB
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA −
−
−
−
−
−
65
ns
35
ns
35
ns
240 ns
200 ns
50
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1997 Jun 02
4
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