BSP 129
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ≥ 2 × ID × R , DS(on)max. tp = 80 µs
Drain-source on-resistance
RDS(on) = f (Tj)
parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
5